Title
Enhancement of proximity-induced superconductivity in a planar Ge hole gas
Author
Aggarwal, K.
Hofmann, A.
Jirovec, D.
Prieto, I.
Sammak, A.
Botifoll, M.
Martí-Sánchez, S.
Veldhorst, M.
Arbiol, J.
Scappucci, G.
Danon, J.
Katsaros, G.
Publication year
2021
Abstract
Hole gases in planar germanium can have high mobilities in combination with strong spin-orbit interaction and electrically tunable g factors, and are therefore emerging as a promising platform for creating hybrid superconductor-semiconductor devices. A key challenge towards hybrid Ge-based quantum technologies is the design of high-quality interfaces and superconducting contacts that are robust against magnetic fields. In this work, by combining the assets of aluminum, which provides good contact to the Ge, and niobium, which has a significant superconducting gap, we demonstrate highly transparent low-disordered JoFETs with relatively large ICRN products that are capable of withstanding high magnetic fields. We furthermore demonstrate the ability of phase-biasing individual JoFETs, opening up an avenue to explore topological superconductivity in planar Ge. The persistence of superconductivity in the reported hybrid devices beyond 1.8 T paves the way towards integrating spin qubits and proximity-induced superconductivity on the same chip.
Subject
Industrial Innovation
To reference this document use:
http://resolver.tudelft.nl/uuid:98c40efa-13aa-4926-98e4-a7c78c509726
DOI
https://doi.org/10.1103/physrevresearch.3.l022005
TNO identifier
961015
Publisher
American Physical Society APS, College Park, MD, USA
ISSN
2643-1564
Source
Physical Review Research, L022005-1 - L022005-7
Document type
article