Title
Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors
Author
Nag, M.
Muller, R.
Steudel, S.
Smout, S.
Bhoolokam, A.
Myny, K.
Schols, S.
Genoe, J.
Cobb, B.
Kumar, A.
Gelinck, G.
Fukui, Y.
Groeseneken, G.
Heremans, P.
Publication year
2015
Abstract
We demonstrated self-aligned amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistors (TFTs) where the source–drain (S/D) regions were made conductive via chemical reduction of the a-IGZO via metallic calcium (Ca). Due to the higher chemical reactivity of Ca, the process can be operated at lower temperatures. The Ca process has the additional benefit of the reaction byproduct calcium oxide being removable through a water rinse step, thus simplifying the device integration. The Ca-reduced a-IGZO showed a sheet resistance (RSHEET) value of 0.7 kΩ/sq., with molybdenum as the S/D metal. The corresponding a-IGZO TFTs exhibited good electrical properties, such as a field-effect mobility (μFE) of 12.0 cm2/(V s), a subthreshold slope (SS−1) of 0.4 V/decade, and an on/off current ratio (ION/OFF) above 108. Cop. 2015 The Korean Information Display Society.
Subject
Nano Technology
HOL - Holst
TS - Technical Sciences
a-IGZO
Amorphous films
Amorphous oxide semiconductors
Amorphous indium gallium-zinc oxide
TFTs
Low temperature formation
Lower temperatures
Thin film transistors
To reference this document use:
http://resolver.tudelft.nl/uuid:98451e5c-1132-48e6-9108-43743f0d8705
DOI
https://doi.org/10.1080/15980316.2015.1043359
TNO identifier
527055
Publisher
Taylor and Francis Ltd.
ISSN
1598-0316
Source
Journal of Information Display, 16 (2), 111-117
Document type
article