Print Email Facebook Twitter Area-selective deposition of SiO2 based on spatial ALD with interleaved etching steps to obtain high selectivity Title Area-selective deposition of SiO2 based on spatial ALD with interleaved etching steps to obtain high selectivity Author Mameli, A. Roozeboom, F. Poodt, P. Publication year 2019 Abstract Area-selective atomic layer deposition (AS-ALD) has the potential for pushing device manufacturing towards new frontiers. However, the selectivity that can be obtained is often very limited and the throughput of most AS-ALD methods is low, which hampers its industrial acceptance.[1,2] In this work, we present a process for AS-ALD of SiO2 using intermittent plasma etching steps to increase the selectivity above 10 nm. The deposition process itself is performed in a spatial ALD mode at atmospheric pressure that allows for achieving high throughput. AS-ALD of SiO2 on a pre-patterned substrate with SiO2 and ZnO was demonstrated using a chemoselective inhibitor that chemisorbs preferentially on the nongrowth area (ZnO) while it allows for depositing SiO2 on the growth area (SiO2). In order to obtain high selectivity, a blanket fluorocarbon plasma etching step was interleaved after every 110 ALD cycles. Subject Industrial InnovationAtomic layer etchingALESiO2Atomic layer depositionSpatial ALDEtching To reference this document use: http://resolver.tudelft.nl/uuid:95e98ed1-b6af-4f9a-a0dd-ed11adb17d89 TNO identifier 868215 Bibliographical note 19th Int. Conf. on Atomic Layer Deposition & 6th Int. Atomic Layer Etching Workshop, Bellevue, WA, USA, July 21-24, 2019; paper AS-TuP5 Document type public lecture Files To receive the publication files, please send an e-mail request to TNO Library.