Area-selective deposition of SiO2 based on spatial ALD with interleaved etching steps to obtain high selectivity

Area-selective deposition of SiO2 based on spatial ALD with interleaved etching steps to obtain high selectivity

Mameli, A.
Roozeboom, F.
Poodt, P.

2019

Area-selective atomic layer deposition (AS-ALD) has the potential for pushing device manufacturing towards new frontiers. However, the selectivity that can be obtained is often very limited and the throughput of most AS-ALD methods is low, which hampers its industrial acceptance.[1,2] In this work, we present a process for AS-ALD of SiO2 using intermittent plasma etching steps to increase the selectivity above 10 nm.[3] The deposition process itself is performed in a spatial ALD mode at atmospheric pressure that allows for achieving high throughput.[4] AS-ALD of SiO2 on a pre-patterned substrate with SiO2 and ZnO was demonstrated using a chemoselective inhibitor that chemisorbs preferentially on the nongrowth area (ZnO) while it allows for depositing SiO2 on the growth area (SiO2). In order to obtain high selectivity, a blanket fluorocarbon plasma etching step was interleaved after every 110 ALD cycles.

Industrial Innovation
Atomic layer etching
ALE
SiO2
Atomic layer deposition
Spatial ALD
Etching

http://resolver.tudelft.nl/uuid:95e98ed1-b6af-4f9a-a0dd-ed11adb17d89

868215

19th Int. Conf. on Atomic Layer Deposition & 6th Int. Atomic Layer Etching Workshop, Bellevue, WA, USA, July 21-24, 2019; paper AS-TuP5

public lecture