Title
Solution-processed and low-temperature metal oxide n-channel thin-film transistors and low-voltage complementary circuitry on large-area flexible polyimide foil
Author
Rockelé, M.
Pham, D.V.
Steiger, J.
Botnaras, S.
Weber, D.
Vanfleteren, J.
Sterken, T.
Cuypers, D.
Steudel, S.
Myny, K.
Schols, S.
van der Putten, J.B.P.H.
Genoe, J.
Heremans, P.
Publication year
2012
Abstract
High-performance solution-based n-type metal oxide thin-film transistors (TFTs), fabricated directly on polyimide foil at a post-annealing temperature of only 250''C, are realized and reported. Saturation mobilities exceeding 2cmV(Vs) and on-to-off current ratios up to 10^ are achieved. The usage of these oxide n-type TFTs as the pixel drive and select transistors In future flexible activematrix organic light-emitting diode (AMOLED) displays is proposed. With these oxide n-type TFTs, fast and low-voltage n-type only flexible circuitry is demonstrated. Furthermore, a complete 8-bit radiofrequency identification transponder chip on foil has been fabricated and measured, to prove that these oxide n-type TFTs have reached already a high level of yield and reliability. The integration of the same solution-based oxide n-type TFTs with organic p-type TFTs into hybrid complementary circuitry on polyimide foil is demonstrated. A comparison between both the n-type only and complementary elementary circuitry shows the high potential of this hybrid complementary technology for future line-drive circuitry embedded at the borders of flexible AMOLED displays.
Subject
Mechatronics, Mechanics & Materials
HOL - Holst
TS - Technical Sciences
Electronics
Industrial Innovation
Solution Processed metal oxide
Polyimide
Thin film transistors
Complementary technology
Hybrid organic inorganic
To reference this document use:
http://resolver.tudelft.nl/uuid:94808fb4-1480-4ba7-8444-4c6e3229fe78
TNO identifier
502787
ISSN
0734-1768
Source
Journal of the Society for Information Display, 20 (9), 499-507
Document type
article