Title
Design and Analysis of a 34 dBm Ka-Band GaN High Power Amplifier MMIC
Author
TNO Defensie en Veiligheid
van Heijningen, M.
van Vliet, F.E.
Quay, R.
van Raay, F.
Seelmann-Eggebert, M.
Publication year
2006
Abstract
This paper presents the design and analysis issues related to the use of recent GaN technologies for realizing high power millimeter wave MMICs. Two GaN Ka-band amplifier MMICs have been designed, fabricated and characterized. The small-signal and power measurement results are presented for both amplifiers, with an excellent output power of 34.1 dBm at 27 GHz for the 2-stage power amplifier MMIC. Both MMICs have a very good yield and performance, even more so in regard of the current state-of-the-art. The observed deviations between the original simulation and measurements have been explained by extensive use of 3D EM simulations of the coplanar passive structures. © 2006 EuMA.
Subject
MMIC power amplifiers
Circuit simulation
Gallium nitride
Millimeter wave devices
Passive networks
Power amplifiers
Coplanar passive structures
Performance evaluation
To reference this document use:
http://resolver.tudelft.nl/uuid:9445a635-9c13-489c-b3b5-9dc3992350f9
TNO identifier
219155
Publisher
EuMA, Louvain-la-Neuve
Source
Proceedings of the 1st European Microwave Integrated Circuits Conference, EuMIC 2006, 10-13 September 2006, Manchester, UK, 75-78
Document type
conference paper