Print Email Facebook Twitter In-Panel 31.17dB 140kHz 87W Unipolar Dual-Gate In-Ga-Zn-O Charge-Sense Amplifier for 500dpi Sensor Array on Flexible Displays Title In-Panel 31.17dB 140kHz 87W Unipolar Dual-Gate In-Ga-Zn-O Charge-Sense Amplifier for 500dpi Sensor Array on Flexible Displays Author Papadopoulos, N. Steudel, S. de Roose, F. Eigabry, D.M. Kronemeijer, A.J. Genoe, J. Dehaene, W. Myny, K. Publication year 2018 Abstract In this paper a charge sense amplifier (CSA) using a 5μm In-Ga-Zn-O transistor technology on 15μm thick flexible substrate is presented for readout of a 500dpi fingerprint sensor array targeting direct integration with active matrix organic light emitting displays (AMOLED). The CSA achieves a linear input range of 0.8V for rail to rail output at VDD=15V. The CSA comprises of a high gain and stable dual-ended output dual-stage amplifier. The n-type load is driven by a dual-stage buffer and start-up circuit to increase the performance and ensure stability. The amplifier operates down to 6V supply voltage. It achieves 31.17dB DC-gain, 140kHz gain-bandwidth, 53o phase margin and dissipates 87μW at 15V. The footprint of the CSA is 0.3mm2 and enables 1fps readout of 1 megapixel 500dpi sensor array. Subject AmoledAmplifierCsaDisplayDual gateIgzoImagerIn-panelMetal-oxide2015 Nano TechnologyHOL - Holst To reference this document use: http://resolver.tudelft.nl/uuid:92ea41f3-3ddd-4844-ab09-eea2564d601c DOI https://doi.org/10.1109/esscirc.2018.8494260 TNO identifier 954960 Publisher Institute of Electrical and Electronics Engineers Inc. ISBN 9781538654 ISSN 1930-8833 Source ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference, 44th IEEE European Solid State Circuits Conference, ESSCIRC 2018, 3 September 2018 through 6 September 2018, 194-197 Document type conference paper Files To receive the publication files, please send an e-mail request to TNO Library.