Title
Method and apparatus for depositing atomic layers on a substrate
Author
Knaapen, R.J.W.
Olieslagers, R.
van den Berg, D.
van den Boer, M.C.
Roozeboom, F.
Publication year
2021
Abstract
Method of performing atomic layer deposition. The method comprises supplying a precursor gas towards a substrate, using a deposition head including one or more gas supplies, including a precursor gas supply. The precursor gas reacts near a surface of the substrate for forming an atomic layer. The deposition head has an output face comprising the gas supplies, which at least partly faces the substrate surface during depositing the atomic layer. The output face has a substantially rounded shape defining a movement path of the substrate. The precursor-gas supply is moved relative to the substrate by rotating the deposition head while supplying the precursor gas, for depositing a stack of atomic layers while continuously moving in one direction. The surface of the substrate is kept contactless with the output face by means of a gas bearing.
Subject
High Tech Systems & Materials
Industrial Innovation
To reference this document use:
http://resolver.tudelft.nl/uuid:92d2538e-227f-432d-bd19-266b12157223
TNO identifier
960616
Report number
US 11,149,352 B2
Publisher
USPTO
Document type
patent