Title
Atmospheric plasma-enhanced spatial-ALD of InZnO for high mobility thin film transistors
Author
Illiberi, A.
Katsouras, I.
Gazibegovic, S.
Cobb, B.
Nekovic, E.
van Boekel, W.
Frijters, C.
Maas, J.
Roozeboom, F.
Creyghton, Y.
Gelinck, G.
Publication year
2018
Abstract
In this manuscript, the authors investigate the growth of indium zinc oxide, indium zinc oxide (InZnO, IZO) as a channel material for thin-film transistors. IZO is grown at atmospheric pressure and a high deposition rate using spatial atomic layer deposition (S-ALD). By varying the ratio of diethylzinc and trimethylindium vapor, the In/(In þ Zn) ratio of the film can be accurately tuned in the entire range from zinc oxide to indium oxide. Thin film transistors with an In to Zn ratio of 2:1 show high field-effect mobility—exceeding 30 cm2/V s—and excellent stability. The authors demonstrate large scale integration in the form of 19-stage ring oscillators operating at 110 kHz. These electrical characteristics, in combination with the intrinsic advantages of atomic layer deposition, demonstrate the great potential of S-ALD for future display production.
Subject
Nano Technology
HOL - Holst
TS - Technical Sciences
Materials Physics
Industrial Innovation
Atomic layer deposition
Spatial ALD
IZO
TFT
Thin film transistors
To reference this document use:
http://resolver.tudelft.nl/uuid:91dc1e3b-763b-459e-bcf3-b3620b8ff06d
DOI
https://doi.org/10.1116/1.5008464
TNO identifier
785889
Publisher
American Vacuum Society
ISSN
0734-2101
Source
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 36 (4)
Article number
04F401
Document type
article