Title
Low-temperature and low-voltage, solution-processed metal oxide n-TFTs and flexible circuitry on large-area polyimide foil
Author
Rockelé, M.
Pham, D.-V.
Steiger, J.
Botnaras, S.
Weber, D.
Vanfleteren, J.
Sterken, T.
Cuypers, D.
Steudel, S.
Myny, K.
Schols, S.
van der Putten, J.B.P.H.
Genoe, J.
Heremans, P.
Publication year
2011
Abstract
In this article, we report on high-performance solution-based n-type metal oxide TFTs processed directly on polyimide foil and annealed at 250°C. Saturation mobilities exceeding 2 cm2/(Vs) and Ion/I off ratios beyond 108 have been achieved. Using these oxide n-TFTs, fast and low-voltage flexible circuitry is presented. Furthermore, a complete 8-bit RFID transponder chip, containing 294 oxide n-TFTs has been fabricated. Both high-speed and low-voltage operation makes the presented oxide n-TFT technology suited for both the pixel driving and embedded line-drive circuitry at the borders of flexible AMOLED displays.
Subject
Mechatronics, Mechanics & Materials
HOL - Holst
TS - Technical Sciences
High Tech Systems & Materials
Materials
Industrial Innovation
To reference this document use:
http://resolver.tudelft.nl/uuid:9181182d-1c1e-4ecf-97c7-b0575cd1b18c
TNO identifier
466625
ISBN
9781622761906
ISSN
1883-2490
Source
18th International Display Workshops 2011, IDW 2011, 7 - 9 December 2011, Nagoya, Japan, 2, 1267-1270
Series
Proceedings of the International Display Workshops
Document type
conference paper