Print Email Facebook Twitter Low-temperature and low-voltage, solution-processed metal oxide n-TFTs and flexible circuitry on large-area polyimide foil Title Low-temperature and low-voltage, solution-processed metal oxide n-TFTs and flexible circuitry on large-area polyimide foil Author Rockelé, M. Pham, D.-V. Steiger, J. Botnaras, S. Weber, D. Vanfleteren, J. Sterken, T. Cuypers, D. Steudel, S. Myny, K. Schols, S. van der Putten, J.B.P.H. Genoe, J. Heremans, P. Publication year 2011 Abstract In this article, we report on high-performance solution-based n-type metal oxide TFTs processed directly on polyimide foil and annealed at 250°C. Saturation mobilities exceeding 2 cm2/(Vs) and Ion/I off ratios beyond 108 have been achieved. Using these oxide n-TFTs, fast and low-voltage flexible circuitry is presented. Furthermore, a complete 8-bit RFID transponder chip, containing 294 oxide n-TFTs has been fabricated. Both high-speed and low-voltage operation makes the presented oxide n-TFT technology suited for both the pixel driving and embedded line-drive circuitry at the borders of flexible AMOLED displays. Subject Mechatronics, Mechanics & MaterialsHOL - HolstTS - Technical SciencesHigh Tech Systems & MaterialsMaterialsIndustrial Innovation To reference this document use: http://resolver.tudelft.nl/uuid:9181182d-1c1e-4ecf-97c7-b0575cd1b18c TNO identifier 466625 ISBN 9781622761906 ISSN 1883-2490 Source 18th International Display Workshops 2011, IDW 2011, 7 - 9 December 2011, Nagoya, Japan, 2, 1267-1270 Series Proceedings of the International Display Workshops Document type conference paper Files To receive the publication files, please send an e-mail request to TNO Library.