Title
Medium Frequency Physical Vapor Deposited Al2O3 and SiO2 as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors
Author
Nag, M.
Bhoolokam, A.
Steudel, S.
Chasin, A.
Maas, J.
Genoe, J.
Murata, M.
Groeseneken, G.
Heremans, P.
Publication year
2015
Abstract
In this work, we report on amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with medium frequency physical vapor deposited (mf-PVD) etch-stop-layer (ESL). TFT with mf-PVD ESL show comparable characteristics such as fieldeffect mobility (μFE), sub-threshold slope (SS−1) and current ratio (ION/OFF) to the conventional plasma enhanced chemical vapor deposition (PECVD) ESL based TFT, however significant differences were observed in gate bias-stress stabilities. The TFTs with mf-PVD ESL showed lower threshold-voltage (VTH) shifts compared to TFTs with PECVD ESL when stressed under a gate field of +/−1 MV/cm for duration of 104 seconds in dark and light conditions. We associate the better bias-stress stability of the mf-PVD ESL based TFT to better passivating properties and the low hydrogen content of the mf-PVD layer compared to PECVD layer.
Subject
Nano Technology
HOL - Holst
TS - Technical Sciences
Industrial Innovation
IGZO
Metal oxide
TFT
To reference this document use:
http://resolver.tudelft.nl/uuid:8f5eb130-677a-4efe-8f82-e1b705cb2b9c
DOI
https://doi.org/10.1149/2.0201505jss
TNO identifier
868223
Source
ECS Journal of Solid State Science and Technology, 4 (2), Q38-Q42
Document type
article