Title
Atmospheric spatial atomic layer deposition of ZnOS buffer layers for flexible Cu(In,Ga)Se2 solar cells
Author
Illiberi, A.
Frijters, C.
Ruth, M.
Bermaud, D.
Poodt, P.
Roozeboom, F.
Bolt, J.P.
Publication year
2018
Abstract
Zinc oxysulfide (ZnOS) is synthesized at atmospheric pressure in a laboratory-scale spatial atomic layer deposition setup by sequentially exposing the substrate to diethyl zinc and an H2O/H2S mixture, separated by a nitrogen gas curtain. The co-injection of H2O and H2S vapors in the same deposition zone enables an accurate control of the S/(O + S) ratio, the morphology, and the optoelectronic properties of the films. Next, the ZnOS deposition process is transferred to an industrial roll-to-roll spatial-ALD setup. ZnOS is applied as a buffer layer in flexible Cu(In,Ga)Se2 solar cells, instead of the commonly used CdS, achieving a best efficiency of typically 13% in small area cells (0.57 cm2) and 9.2% in flexible mini-modules (270 cm2). These results show the viability of atmospheric spatial-ALD as a new technique for roll-to-roll manufacturing of flexible photovoltaics modules based on a Cu(In,Ga)Se2 absorber.
Subject
Nano Technology
HOL - Holst
TS - Technical Sciences
Materials Physics
Industrial Innovation
Atomic layer deposition
To reference this document use:
http://resolver.tudelft.nl/uuid:8ed422c1-c66a-4988-b6c0-038720c41391
DOI
https://doi.org/10.1116/1.5040457
TNO identifier
820574
ISSN
0734-2101
Source
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 36 (5)
Article number
051511
Document type
article