Print Email Facebook Twitter Design procedure for integrated microwave GaAs stacked-FET high-power amplifiers Title Design procedure for integrated microwave GaAs stacked-FET high-power amplifiers Author van der Bent, G. de Hek, P. van Vliet, F.E. Publication year 2019 Abstract The application of stacked-FETs in power ampli fiers allows for a supply voltage higher than supported by the breakdown voltage of a single transistor. Potential benefits of the increased supply voltage are reduced supply currents and a lower matching ratio at the output of the amplifier. Furthermore, an increased output power per chip area is obtained due to the reduction in passive structures resulting in more area-efficient power combining. In this paper, the procedure for the design of integrated microwave stacked-FET is discussed. Several options for the correct distribution of RF voltage and current swings are investigated and the relationship between the number of stacked transistors and bandwidth is addressed. The procedure is demonstrated by the design of an S-band GaAs stacked-FET containing three transistors. This stacked-FET is applied in an S-band HPA that has a PAE of more than 40% at an output power of 20 W, which is more than twice the output power of any previously reported GaAs stacked-FET HPA. Subject Microwave-integrated circuitsNonlinear circuitsPower-integrated circuitsRadio frequency (RF) signalsTransmittersDesignGallium arsenideIII-V semiconductorsMicrowave amplifiersSemiconducting galliumDesign procedureHigh power amplifierPassive structuresPotential benefitsSingle transistorsStacked transistorsSupply currentsSupply voltagesPower amplifiers To reference this document use: http://resolver.tudelft.nl/uuid:8c8af387-39e0-46e3-9e98-129e718e3f74 TNO identifier 955110 Publisher Institute of Electrical and Electronics Engineers Inc. ISSN 0018-9480 Source IEEE Transactions on Microwave Theory and Techniques, 67 (67), 3716-3731 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.