Print Email Facebook Twitter Excellent Passivation of n-Type Silicon Surfaces Enabled by Pulsed-Flow Plasma-Enhanced Chemical Vapor Deposition of Phosphorus Oxide Capped by Aluminum Oxide Title Excellent Passivation of n-Type Silicon Surfaces Enabled by Pulsed-Flow Plasma-Enhanced Chemical Vapor Deposition of Phosphorus Oxide Capped by Aluminum Oxide Author Melskens, J. Theeuwes, R.J. Black, L.E. Berghuis, W.J.H. Macco, B. Bronsveld, P.C.P. Kessels, W.M.M. Publication year 2021 Subject Aluminum oxideChemical vapor depositionPhosphorus oxideSiliconSurface passivation To reference this document use: http://resolver.tudelft.nl/uuid:87ccb5ac-047d-4cd2-b81b-37e06181cf64 DOI https://doi.org/10.1002/pssr.202000399 TNO identifier 957636 Publisher Wiley ISSN 1862-6254 Source Physica Status Solidi - Rapid Research Letters, 15 (15) Document type article Files PDF melskens-2021-excellent.pdf