Print Email Facebook Twitter High Performance Stacked-FETs in 0.25 µm GaN Technology for S-band Power Amplifiers Title High Performance Stacked-FETs in 0.25 µm GaN Technology for S-band Power Amplifiers Author van der Bent, G. de Hek, A.P. Knight, R.J. van Vliet, F.E. Publication year 2022 Abstract In this article the feasibility and benefits of tacked-FET structures in a state-of-art GaN technology are investigated. Trade-offs between output power, efficiency and stability are made to yield stable, high performance devices. The results of three S-band GaN stacked-FET structures in the UMS GH25-10 technology are given. These structures are designed for drain voltages levels of 60 V or higher, which is (more than)twice the nominal drain voltage for this technology. It is shown that power level above 5 W/mm with PAE levels above 60 % are achieved. The obtained results are translated to power amplifier performance estimations showing the potential of these structures. Subject Microwave integrated circuitsPower amplifiers To reference this document use: http://resolver.tudelft.nl/uuid:86257f22-926c-4873-ae6d-f1489c01833f TNO identifier 977842 Source 52nd European Microwave Conference (EuMC)27–29 September 2022, Milan, Italy Document type conference paper Files To receive the publication files, please send an e-mail request to TNO Library.