Title
High Performance Stacked-FETs in 0.25 µm GaN Technology for S-band Power Amplifiers
Author
van der Bent, G.
de Hek, A.P.
Knight, R.J.
van Vliet, F.E.
Publication year
2022
Abstract
In this article the feasibility and benefits of tacked-FET structures in a state-of-art GaN technology are investigated. Trade-offs between output power, efficiency and stability are made to yield stable, high performance devices. The results of three S-band GaN stacked-FET structures in the UMS GH25-10 technology are given. These structures are designed for drain voltages levels of 60 V or higher, which is (more than)twice the nominal drain voltage for this technology. It is shown that power level above 5 W/mm with PAE levels above 60 % are achieved. The obtained results are translated to power amplifier performance estimations showing the potential of these structures.
Subject
Microwave integrated circuits
Power amplifiers
To reference this document use:
http://resolver.tudelft.nl/uuid:86257f22-926c-4873-ae6d-f1489c01833f
TNO identifier
977842
Source
52nd European Microwave Conference (EuMC)27–29 September 2022, Milan, Italy
Document type
conference paper