Title
Multilevel information storage in ferroelectric polymer memories
Author
Tripathi, A.K.
van Breemen, A.J.J.M.
Shen, J.
Gao, Q.
Ivan, M.G.
Reimann, K.
Meinders, E.R.
Gelinck, G.H.
Publication year
2011
Abstract
Multibit memory devices based on the ferroelectric copolymer P(VDF-TrFE) (poly-(vinylidenefluoride-trifluoroethylene)) are presented. Multilevel microstructures are fabricated by thermal imprinting of spin-coated ferroelectric polymer film using a rigid Si template. Multibit storage in capacitors and thin-film transistor memory is realized by implementing imprinted ferroelectric polymer films as the insulator and gate dielectric layers, respectively. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Subject
Mechatronics, Mechanics & Materials
HOL - Holst
TS - Technical Sciences
Electronics
ferroelectric polymers
imprinting
multibit storage
non-volatile memories
To reference this document use:
http://resolver.tudelft.nl/uuid:85b43d40-a181-44b0-9716-bdc1bdb9f447
TNO identifier
436602
ISSN
0935-9648
Source
Advanced Materials, 23 (36), 4146-4151
Document type
article