Title
Memory Solutions for Flexible Thin-Film Logic: Up to 8kb, >105.9kb/s LPROM and SRAM with Integrated Timing Generation Meeting the ISO NFC Standard
Author
de Roose, F.
Genoe, J.
Kronemeijer, A.J.
Myny, K.
Dehaene, W.
Publication year
2019
Abstract
Thin-film transistor (TFT) technologies have long been used predominantly for display fabrication and are attractive for large area, low cost and flexible circuit applications. Thanks to the improving performance of thin-film metal-oxide NFC tags and data processing chips on foil [1], [2], fabs are considering the large-scale production of flexible logic circuits. However, these systems require a memory, but metal-oxide technology lacks reliable, large memory arrays. Today, data storage is limited to ROMs, flipflops and SRAMs. No memory array has been demonstrated with sufficient storage capacity and speed within the typical power and area budget. This paper demonstrates the first large, fast and low-power memory array in flexible metal-oxide technology, comparable to the Si Intel 4000 series in the seventies [3]. © 2019 IEEE.
Subject
Budget control
Computer circuits
Data handling
Flexible displays
ISO Standards
Memory architecture
Metallic compounds
Metals
Static random access storage
Thin film transistors
Thin films
Timing circuits
Data storage
Flexible circuit
Flexible thin films
Improving performance
Large scale productions
Low-power memory
Storage capacity
Thin film metal
Thin film circuits
To reference this document use:
http://resolver.tudelft.nl/uuid:809159b0-ef63-4371-be3d-3fb6d0b10e2e
TNO identifier
866269
Publisher
Institute of Electrical and Electronics Engineers Inc.
ISSN
1936-530
Source
Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 2019 IEEE International Solid-State Circuits Conference, ISSCC 2019, 17 February 2019 through 21 February 2019, 206-208
Article number
8662503
Document type
conference paper