Memory Solutions for Flexible Thin-Film Logic: Up to 8kb, >105.9kb/s LPROM and SRAM with Integrated Timing Generation Meeting the ISO NFC Standard
de Roose, F.
Thin-film transistor (TFT) technologies have long been used predominantly for display fabrication and are attractive for large area, low cost and flexible circuit applications. Thanks to the improving performance of thin-film metal-oxide NFC tags and data processing chips on foil , , fabs are considering the large-scale production of flexible logic circuits. However, these systems require a memory, but metal-oxide technology lacks reliable, large memory arrays. Today, data storage is limited to ROMs, flipflops and SRAMs. No memory array has been demonstrated with sufficient storage capacity and speed within the typical power and area budget. This paper demonstrates the first large, fast and low-power memory array in flexible metal-oxide technology, comparable to the Si Intel 4000 series in the seventies . © 2019 IEEE.
To reference this document use:
Static random access storage
Thin film transistors
Flexible thin films
Large scale productions
Thin film metal
Thin film circuits
Institute of Electrical and Electronics Engineers Inc.
Digest of Technical Papers - IEEE International Solid-State Circuits Conference, 2019 IEEE International Solid-State Circuits Conference, ISSCC 2019, 17 February 2019 through 21 February 2019, 206-208