Title
Organic nonvolatile memory devices based on ferroelectricity
Author
Naber, R.C.G.
Asadi, K.
Blom, P.W.M.
de Leeuw, D.M.
de Boer, B.
TNO Industrie en Techniek
Publication year
2010
Abstract
A memory functionality is a prerequisite for many applications of electronic devices. Organic nonvolatile memory devices based on ferroelectricity are a promising approach toward the development of a low-cost memory technology. In this Review Article we discuss the latest developments in this area with a focus on three of the most important device concepts: ferroelectric capacitors, field-effect transistors, and diodes. Integration of these devices into larger memory arrays is also discussed.
Subject
Physics
Electronic devices
Ferroelectric capacitors
Memory array
Organic non-volatile memory devices
Ferroelectricity
Field effect transistors
Nonvolatile storage
Organic compound
Equipment design
Computer Storage Devices
Magnetics
Organic Chemicals
Signal Processing, Computer-Assisted
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TNO identifier
461596
ISSN
0935-9648
Source
Advanced Materials, 22 (9), 933-945
Document type
article