Title
Optical detection of deep electron traps in poly(p-phenylene vinylene) light-emitting diodes
Author
Kuik, M.
Vandenbergh, J.
Goris, L.
Begemann, E.J.
Lutsen, L.
Vanderzande, D.J.M.
Manca, J.V.
Blom, P.W.M.
Publication year
2011
Abstract
The trap-limited electron currents in poly(p-phenylene vinylene) (PPV) derivatives can be modeled using a Gaussian trap distribution that is positioned approximately 0.75 eV below the lowest unoccupied molecular orbital (LUMO) of PPV. Photothermal deflection spectroscopy measurements and internal photo-emission spectroscopy measurements confirm the claim of a Gaussian shaped trap distribution centered at 0.75 eV below the LUMO of PPV. Additionally, two PPV derivatives that differ in the number of conformational defects incorporated during synthesis exhibit identical electron trapping behavior, showing that the traps do not originate from extrinsic impurities of the synthesis or defects in the polymer chains. © 2011 American Institute of Physics.
Subject
Mechatronics, Mechanics & Materials
HOL - Holst
TS - Technical Sciences
Electronics
Industrial Innovation
Conformational defects
Deep electron traps
Electron currents
Electron trapping
Gaussians
Lowest unoccupied molecular orbital
Optical detection
Photothermal deflection spectroscopy
Poly(p-phenylene vinylene) derivatives
Poly(p-phenylenevinylene)
Polymer chains
PPV derivatives
Spectroscopy measurements
Trap distributions
Defects
Electron traps
Emission spectroscopy
Light emitting diodes
Molecular orbitals
Aromatic compounds
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http://resolver.tudelft.nl/uuid:74174c0c-30a5-44fd-abe6-e4bf1319b43a
TNO identifier
461404
ISSN
0003-6951
Source
Applied Physics Letters, 99 (18)
Article number
No.: 183305
Document type
article