Print Email Facebook Twitter Rapid gate-based spin read-out in silicon using an on-chip resonator Title Rapid gate-based spin read-out in silicon using an on-chip resonator Author Zheng, G. Samkharadze, N. Noordam, M.L. Kalhor, N. Brousse, D. Sammak, A. Scappucci, G. Vandersypen, L.M.K. Publication year 2019 Abstract Silicon spin qubits are one of the leading platforms for quantum computation1,2. As with any qubit implementation, a crucial requirement is the ability to measure individual quantum states rapidly and with high fidelity. Since the signal from a single electron spin is minute, the different spin states are converted to different charge states3,4. Charge detection, so far, has mostly relied on external electrometers5?7, which hinders scaling to two-dimensional spin qubit arrays2,8,9. Alternatively, gate-based dispersive read-out based on off-chip lumped element resonators has been demonstrated10?13, but integration times of 0.2?2 ms were required to achieve single-shot read-out14?16. Here, we connect an on-chip superconducting resonant circuit to two of the gates that confine electrons in a double quantum dot. Measurement of the power transmitted through a feedline coupled to the resonator probes the charge susceptibility, distinguishing whether or not an electron can oscillate between the dots in response to the probe power. With this approach, we achieve a signal-to-noise ratio of about six within an integration time of only 1 ?s. Using Pauli?s exclusion principle for spin-to-charge conversion, we demonstrate single-shot read-out of a two-electron spin state with an average fidelity of >98% in 6 ?s. This result may form the basis of frequency-multiplexed read-out in dense spin qubit systems without external electrometers, therefore simplifying the system architecture. ? 2019, The Author(s), under exclusive licence to Springer Nature Limited.The spin state of electrons in a double quantum dot in silicon is read in a single shot with 98% average fidelity within 6 ?s by means of an on-chip superconducting resonator connected to two of the gates defining the double dot structure. Subject High Tech Systems & MaterialsIndustrial InnovationElectrometersMagnetic momentsNanocrystalsProbesQuantum opticsQubitsResonant circuitsSemiconductor quantum dotsSignal to noise ratioSiliconSpin dynamicsSuperconducting resonatorsCharge susceptibilitiesDouble quantum dotsExclusion principleIntegration timeOn-chip resonatorsSingle electron spinSystem architecturesTwo-electron spin stateElectrospinning To reference this document use: http://resolver.tudelft.nl/uuid:6f262489-87fa-403f-8c5c-ac4b92be1e58 DOI https://doi.org/10.1038/s41565-019-0488-9 TNO identifier 868191 Publisher Nature Publishing Group, Heidelberg, Germany ISSN 1748-3387 Source Nature Nanotechnology, 14 (Augustus), 742-746 Bibliographical note Corrected: Author Correction Document type article Files To receive the publication files, please send an e-mail request to TNO Library.