Print Email Facebook Twitter Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor Title Ferroelectric switching of poly(vinylidene difluoride-trifluoroethylene) in metal-ferroelectric-semiconductor non-volatile memories with an amorphous oxide semiconductor Author Gelinck, G.H. van Breemen, A.J.J.M. Cobb, B. Publication year 2015 Abstract Ferroelectric polarization switching of poly(vinylidene difluoride-trifluoroethylene) is investigated in different thin-film device structures, ranging from simple capacitors to dual-gate thin-film transistors (TFT). Indium gallium zinc oxide, a high mobility amorphous oxide material, is used as semiconductor. We find that the ferroelectric can be polarized in both directions in the metal-ferroelectric-semiconductor (MFS) structure and in the dual-gate TFT under certain biasing conditions, but not in the single-gate thin-film transistors. These results disprove the common belief that MFS structures serve as a good model system for ferroelectric polarization switching in thin-film transistors. cop. 2015 AIP Publishing LLC. Subject Nano TechnologyHOL - HolstTS - Technical SciencesIndustrial InnovationSemiconducting indiumThin film devicesAmorphous oxide semiconductor (AOS)Ferroelectric polarizationFerroelectric switchingIndium gallium zinc oxides To reference this document use: http://resolver.tudelft.nl/uuid:6be96c16-1bc6-4960-bf25-6834dc4459d5 DOI https://doi.org/10.1063/1.4913920 TNO identifier 525586 Publisher American Institute of Physics Inc. ISSN 0003-6951 Source Applied Physics Letters, 106 (9) Article number 093503 Document type article Files PDF gelinck-2015-ferroelectric.pdf