Print Email Facebook Twitter Transport physics and device modeling of zinc oxide thin-film transistors. Pt. II: Contact Resistance in Short Channel Devices Title Transport physics and device modeling of zinc oxide thin-film transistors. Pt. II: Contact Resistance in Short Channel Devices Author Torricelli, F. Meijboom, J.R. Smits, E. Tripathi, A.K. Gelinck, G.H. Colalongo, L. Kovacs-Vajna, Z.M. de Leeuw, D. Cantatore, E. Publication year 2011 Abstract Abstract—Short-channel zinc oxide (ZnO) thin-film transistors (TFTs) are investigated in a wide range of temperatures and bias conditions. Scaling down the channel length, the TFT performance is seriously affected by contact resistances, which depend on gate voltage and temperature. To account for the contact resistances, the transistor is ideally split in three parts. The contact regions are modeled as two separate transistors with a fixed channel length and an exponential distribution of localized states, whereas the channel is treated as reported in Part I. The overall model reproduces the measured characteristics at different channel length, with a single set of physical and geometrical parameters. It can be readily implemented in a circuit simulator. Numerical simulations confirm the validity of the model approach and are used to evaluate the impact of nonidealities at the electrode/semiconductor interface. Subject Mechatronics, Mechanics & MaterialsHOL - HolstTS - Technical SciencesElectronicsActivation energyAnalytical modelBottom contactThin-film transistors (TFT)Contact resistanceDevice simulationField-effect mobilityZinc oxide (ZnO) To reference this document use: http://resolver.tudelft.nl/uuid:687b63ef-a538-4d94-bf39-b1fb87e98261 TNO identifier 441379 ISSN 0018-9383 Source IEEE Transactions on Electron Devices, 58 (9), 3025-3033 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.