Title
Determination of the trap-assisted recombination strength in polymer light emitting diodes
Author
Kuik, M.
Nicolai, H.T.
Lenes, M.
Wetzelaer, G.-J.A.H.
Lu, M.
Blom, P.W.M.
Publication year
2011
Abstract
The recombination processes in poly(p -phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination channel in PLEDs, which has not been considered until now. The dependence of the open-circuit voltage on light intensity enables us to determine the strength of this process. Numerical modeling of the current-voltage characteristics incorporating both Langevin and trap-assisted recombination yields a correct and consistent description of the PLED, without the traditional correction of the Langevin prefactor. At low bias voltage the trap-assisted recombination rate is found to be dominant over the free carrier recombination rate. © 2011 American Institute of Physics.
Subject
Mechatronics, Mechanics & Materials
HOL - Holst
TS - Technical Sciences
Electronics
Industrial Innovation
Free carrier recombination
Langevin
Langevin recombination
Light intensity
Low bias voltage
Numerical modeling
Photogenerated current
PLED devices
Poly(p-phenylenevinylene)
Polymer light emitting diode
Polymer light-emitting diodes
Prefactors
Recombination channels
Recombination process
Recombination rate
Recombination strength
Light emission
Light emitting diodes
Open circuit voltage
Current voltage characteristics
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TNO identifier
461490
ISSN
0003-6951
Source
Applied Physics Letters, 98 (9)
Article number
No.: 093301
Document type
article