Print Email Facebook Twitter Determination of the trap-assisted recombination strength in polymer light emitting diodes Title Determination of the trap-assisted recombination strength in polymer light emitting diodes Author Kuik, M. Nicolai, H.T. Lenes, M. Wetzelaer, G.-J.A.H. Lu, M. Blom, P.W.M. Publication year 2011 Abstract The recombination processes in poly(p -phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination channel in PLEDs, which has not been considered until now. The dependence of the open-circuit voltage on light intensity enables us to determine the strength of this process. Numerical modeling of the current-voltage characteristics incorporating both Langevin and trap-assisted recombination yields a correct and consistent description of the PLED, without the traditional correction of the Langevin prefactor. At low bias voltage the trap-assisted recombination rate is found to be dominant over the free carrier recombination rate. © 2011 American Institute of Physics. Subject Mechatronics, Mechanics & MaterialsHOL - HolstTS - Technical SciencesElectronicsIndustrial InnovationFree carrier recombinationLangevinLangevin recombinationLight intensityLow bias voltageNumerical modelingPhotogenerated currentPLED devicesPoly(p-phenylenevinylene)Polymer light emitting diodePolymer light-emitting diodesPrefactorsRecombination channelsRecombination processRecombination rateRecombination strengthLight emissionLight emitting diodesOpen circuit voltageCurrent voltage characteristics To reference this document use: http://resolver.tudelft.nl/uuid:6795b4bd-9d38-4478-8816-cd1c8aa8654d TNO identifier 461490 ISSN 0003-6951 Source Applied Physics Letters, 98 (9) Article number No.: 093301 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.