Print Email Facebook Twitter An organic charge trapping memory transistor with bottom source and drain contacts Title An organic charge trapping memory transistor with bottom source and drain contacts Author Debucquoy, M. Bode, D. Genoe, J. Gelinck, G.H. Heremans, P. TNO Industrie en Techniek Publication year 2009 Abstract We present an organic charge trapping memory transistor with lithographically defined bottom source and drain contacts. This device can be written and erased at voltages as low as 15 V. More than 500 write and erase cycles and the retention of the trapped charge over more than three months are shown, demonstrating the possibilities of this device as a reprogramable nonvolatile organic memory element. © 2009 American Institute of Physics. Subject PhysicsNon-volatileOrganic chargeOrganic memoriesSource and drainsTrapped chargeCharge trapping To reference this document use: http://resolver.tudelft.nl/uuid:666eb650-ff06-4d95-80f8-0c47f341263b DOI https://doi.org/10.1063/1.3223588 TNO identifier 461648 ISSN 0003-6951 Source Applied Physics Letters, 95 (10) Article number 103311 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.