Field-effect memory transistors based on arrays of nanowires of a ferroelectric polymer
van Breemen, A.J.J.M.
Kratochvil, E.J.W.L. (editor)
Ferroelectric poly(vinylidene fluoride-co-trifluoroethylene), P(VDF-TrFE), is increasingly used in organic non-volatile memory devices, e.g., in ferroelectric field effect transistors (FeFETs). Here, we report on FeFETs integrating nanoimprinted arrays of P(VDF-TrFE) nanowires. Two previously-unreported architectures are tested, the first one consisting of stacked P(VDF-TrFE) nanowires placed over a continuous semiconducting polymer film; the second one consisting of a nanostriped blend layer wherein the semiconducting and ferroelectric components alternate regularly. The devices exhibit significant reversible memory effects, with operating voltages reduced compared to their continuous film equivalent, and with different possible geometries of the channels of free charge carriers accumulating in the semiconductor. cop. 2015 SPIE.
To reference this document use:
HOL - Holst
TS - Technical Sciences
Printed Memory and Circuits, 10 August 2015 through 13 August 2015, 9569
Proceedings of SPIE - The International Society for Optical Engineering