Title
Rendering high charge density of states in ionic liquid-gated MoS 2 transistors
Author
Lee, Y.
Lee, J.
Kim, S.
Park, H.S.
Publication year
2014
Abstract
We investigated high charge density of states (DOS) in the bandgap of MoS2 nanosheets with variable temperature measurements on ionic liquid-gated MoS2 transistors. The thermally activated charge transport indicates that the electrical current in the two-dimensional MoS 2 nanosheets under high charge density state follows the Meyer-Neldel rule. The achieved high charge density allows the surface DOS estimation of MoS2 nanosheets, which have distinct peaks at 0.135 and 0.145 eV below the conduction band, with the largest DOS values of 9.75 × 10 14 and 4.33 × 1014 cm-2 eV-1, respectively. This may represent the monolayer MoS2 nanosheets that coexist with the MoS2 multilayer in the channel area of the ionic liquid-gated MoS2 transistors. cop. 2014 American Chemical Society.
Subject
Mechanics, Materials and Structures
HOL - Holst
TS - Technical Sciences
Materials Industry Physics
Industrial Innovation
Charge density
Ionic liquids
Nanosheets
Temperature measurement
Density of state
Electrical current
High charges
Meyer-Neldel rules
Thermally activated
Molybdenum disulfide
To reference this document use:
http://resolver.tudelft.nl/uuid:57bad459-169f-4d5c-b7c8-a2a93e6f61a0
DOI
https://doi.org/10.1021/jp5063836
TNO identifier
513453
Publisher
American Chemical Society
ISSN
1932-7455
Source
Journal of Physical Chemistry C, 118 (31), 18278-18282
Document type
article