Title
50 Watt S-band power amplifier in 0.25 μm GaN technology
Author
van der Bent, G.
de Hek, A.P.
van der Graaf, M.
van Vliet, F.E.
Publication year
2014
Abstract
A 50 W S-band High Power Amplifier in the UMS GH25-10 technology is presented. In order to increase the output power per area the size of the transistors is increased beyond the maximum size modelled by the foundry. For this reason the design procedure included the measurements of a transistor and the creation of a scalable Angelov-GaN model with the use of EM simulations. An output matching design approach is adopted which intrinsically optimizes the transistor harmonic load impedance. The results show that the amplifier delivers an output power of over 50 W within the frequency range from 3.05 to 3.5 GHz at a PAE of more than 62 %. The maximum measured output power is 63 W with a PAE of 65 %.
Subject
Observation, Weapon & Protection Systems
RT - Radar Technology
TS - Technical Sciences
Radar
High power amplifiers
Design
Electromagentic simulations
Harmonic load impedance
To reference this document use:
http://resolver.tudelft.nl/uuid:5554b0c5-06a0-42f3-97e0-80e8fc0e3283
DOI
https://doi.org/10.1109/eumic.2014.6997860
TNO identifier
522531
Publisher
EuMA, Louvain-la-Neuve
Source
European Microwave Week EuMW 2014, Proceedings of the 9th European Microwave Integrated Circuits Conference, EuMIC 2014, 6-7 Oct 2014, Rome, Italy, 333-336
Document type
conference paper