Screening of Integrated GaAs Stacked-FET Power Amplifiers

Screening of Integrated GaAs Stacked-FET Power Amplifiers

van der Bent, G.
de Hek, A.P.
van Vliet, F.E.

2019

The manufacturing of radar front-ends is preferably performed with components that are fully tested and known to be functional. This decreases the chances of instant failure or rapid degradation of the system. Complete testing of the RF-performance of the individual MMICs, however, is not always possible due to technical, infrastructural or financial limitations. A good alternative is the screening of several DC parameters that are relevant for a reliable operation. Commonly used parameters for this DC-screening are the pinch-off voltage and off-state breakdown voltage of the transistors. To measure these parameters on all transistors, access is required to the gate, drain and source terminals of these transistors. In a Stacked-FET amplifier not all transistors terminals are directly accessible via DC pads and the inclusion of extra pads will result in a significantly larger layout. The goal therefore is to measure the DC behaviour without the need for extra DC pads. In this article methods are developed to support this goal. © 2019 European Microwave Association (EuMA).

Gallium arsenide
III-V semiconductors
Microwave integrated circuits
Transistors
Complete testing
DC parameters
FET amplifiers
Off-state breakdown voltages
Pinch off voltage
Rapid degradation
Reliable operation
RF performance
Power amplifiers

http://resolver.tudelft.nl/uuid:53f5ab54-5a42-4731-b733-99d45222882a

871871

Institute of Electrical and Electronics Engineers Inc.

9782874870569

EuMIC 2019 - 2019 14th European Microwave Integrated Circuits Conference, 14th European Microwave Integrated Circuits Conference, EuMIC 2019, 30 September 2019 through 1 October 2019, 354-357

8909671

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