Title
Discontinuous pn-heterojunction for organic thin film transistors
Author
Cho, B.
Yu, S.H.
Kim, M.
Lee, M.H.
Huh, W.
Lee, J.
Kim, J.
Cho, J.H.
Lee, J.Y.
Song, Y.J.
Kang, M.S.
Publication year
2014
Abstract
Utilization of discontinuous pn-oragnic heterojunction is introduced as a versatile method to improve charge transport in organic thin film transistors (OTFTs). The method is demonstrated by depositing n-type dioctyl perylene tetracarboxylic diimide (PTCDI-C8) discontinuously onto base p-type pentacene OTFTs. A more pronounced impact of the discontinuous upper layer is obtained on the transistor performances when thinner base layers are employed; a >100-fold enhancement in hole mobility and a >20 V shift in threshold voltage are achieved after applying PTCDI-C8 discontinuously onto 2 nm thick pentacene thin films. Local surface potential measurements (Kelvin-probe force microscopy) and temperature-dependent transport measurements (77-300 K) reveal that the interfacial dipole formed at the pn-heterostructures effectively dopes the base pentacene films p-type and leads to a reduction in transport activation energy. cop. 2014 American Chemical Society.
Subject
Mechanics, Materials and Structures
TFT - Thin Film Technology
TS - Technical Sciences
Chemistry Energy
Industrial Innovation
Activation energy
Thin film transistors
Organic thin film transistor
OTFT
Heterojunctions
To reference this document use:
http://resolver.tudelft.nl/uuid:4ff98c4c-7f63-4cab-a47a-30fac77366de
DOI
https://doi.org/10.1021/jp504114f
TNO identifier
513452
Publisher
American Chemical Society
ISSN
1932-7455
Source
Journal of Physical Chemistry C, 118 (31), 18146-18152
Document type
article