Print Email Facebook Twitter Discontinuous pn-heterojunction for organic thin film transistors Title Discontinuous pn-heterojunction for organic thin film transistors Author Cho, B. Yu, S.H. Kim, M. Lee, M.H. Huh, W. Lee, J. Kim, J. Cho, J.H. Lee, J.Y. Song, Y.J. Kang, M.S. Publication year 2014 Abstract Utilization of discontinuous pn-oragnic heterojunction is introduced as a versatile method to improve charge transport in organic thin film transistors (OTFTs). The method is demonstrated by depositing n-type dioctyl perylene tetracarboxylic diimide (PTCDI-C8) discontinuously onto base p-type pentacene OTFTs. A more pronounced impact of the discontinuous upper layer is obtained on the transistor performances when thinner base layers are employed; a >100-fold enhancement in hole mobility and a >20 V shift in threshold voltage are achieved after applying PTCDI-C8 discontinuously onto 2 nm thick pentacene thin films. Local surface potential measurements (Kelvin-probe force microscopy) and temperature-dependent transport measurements (77-300 K) reveal that the interfacial dipole formed at the pn-heterostructures effectively dopes the base pentacene films p-type and leads to a reduction in transport activation energy. cop. 2014 American Chemical Society. Subject Mechanics, Materials and StructuresTFT - Thin Film TechnologyTS - Technical SciencesChemistry EnergyIndustrial InnovationActivation energyThin film transistorsOrganic thin film transistorOTFTHeterojunctions To reference this document use: http://resolver.tudelft.nl/uuid:4ff98c4c-7f63-4cab-a47a-30fac77366de DOI https://doi.org/10.1021/jp504114f TNO identifier 513452 Publisher American Chemical Society ISSN 1932-7455 Source Journal of Physical Chemistry C, 118 (31), 18146-18152 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.