Print Email Facebook Twitter Effect of quantum Hall edge strips on valley splitting in silicon quantum wells Title Effect of quantum Hall edge strips on valley splitting in silicon quantum wells Author Paquelet Wütz, B. Losert, M.P. Tosato, A. Lodari, M. Bavdaz, P.L. Stehouwer, L. Amin, P. Clarke, J.S. Coppersmith, S.N. Sammak, A. Veldhorst, M. Friesen, M. Scappucci, G. Publication year 2020 Abstract We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field B and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with B and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density eB/h across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 µeV/1011cm−2 , consistent with theoretical predictions for near-perfect quantum well top interfaces. Subject High Tech Systems & MaterialsIndustrial Innovation To reference this document use: http://resolver.tudelft.nl/uuid:4f57d9db-8cfd-45fc-b8d0-9cafe471250e TNO identifier 884266 Publisher American Physical Society APS, College Park, MD, USA Source Physical review letters, 125 (125) Document type article Files To receive the publication files, please send an e-mail request to TNO Library.