Title
Effect of quantum Hall edge strips on valley splitting in silicon quantum wells
Author
Paquelet Wütz, B.
Losert, M.P.
Tosato, A.
Lodari, M.
Bavdaz, P.L.
Stehouwer, L.
Amin, P.
Clarke, J.S.
Coppersmith, S.N.
Sammak, A.
Veldhorst, M.
Friesen, M.
Scappucci, G.
Publication year
2020
Abstract
We determine the energy splitting of the conduction-band valleys in two-dimensional electrons confined to low-disorder Si quantum wells. We probe the valley splitting dependence on both perpendicular magnetic field B and Hall density by performing activation energy measurements in the quantum Hall regime over a large range of filling factors. The mobility gap of the valley-split levels increases linearly with B and is strikingly independent of Hall density. The data are consistent with a transport model in which valley splitting depends on the incremental changes in density eB/h across quantum Hall edge strips, rather than the bulk density. Based on these results, we estimate that the valley splitting increases with density at a rate of 116 µeV/1011cm−2 , consistent with theoretical predictions for near-perfect quantum well top interfaces.
Subject
High Tech Systems & Materials
Industrial Innovation
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http://resolver.tudelft.nl/uuid:4f57d9db-8cfd-45fc-b8d0-9cafe471250e
TNO identifier
884266
Publisher
American Physical Society APS, College Park, MD, USA
Source
Physical review letters, 125 (125)
Document type
article