Print Email Facebook Twitter Charge trapping by self-assembled monolayers as the origin of the threshold voltage shift in organic field-effect transistors Title Charge trapping by self-assembled monolayers as the origin of the threshold voltage shift in organic field-effect transistors Author Gholamrezaie, F. Andringa, A.-M. Roelofs, W.S.C. Neuhold, A. Kemerink, M. Blom, P.W.M. de Leeuw, D.M. Publication year 2012 Abstract The threshold voltage is an important property of organic field-effect transistors. By applying a self-assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly agree with the threshold voltages, which demonstrate that the shift is not due to the dipolar contribution, but due to charge trapping by the SAM. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Subject Mechatronics, Mechanics & MaterialsHOL - HolstTS - Technical SciencesElectronicsIndustrial Innovationorganic field-effect transistorsorganosilanesscanning Kelvin-probe microscopyself-assemblythreshold voltage To reference this document use: http://resolver.tudelft.nl/uuid:44bbeb42-826c-4db6-8274-075f57181970 TNO identifier 446459 ISSN 1613-6810 Source Small, 8 (2), 241-245 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.