Title
Charge trapping by self-assembled monolayers as the origin of the threshold voltage shift in organic field-effect transistors
Author
Gholamrezaie, F.
Andringa, A.-M.
Roelofs, W.S.C.
Neuhold, A.
Kemerink, M.
Blom, P.W.M.
de Leeuw, D.M.
Publication year
2012
Abstract
The threshold voltage is an important property of organic field-effect transistors. By applying a self-assembled monolayer (SAM) on the gate dielectric, the value can be tuned. After electrical characterization, the semiconductor is delaminated. The surface potentials of the revealed SAM perfectly agree with the threshold voltages, which demonstrate that the shift is not due to the dipolar contribution, but due to charge trapping by the SAM. © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Subject
Mechatronics, Mechanics & Materials
HOL - Holst
TS - Technical Sciences
Electronics
Industrial Innovation
organic field-effect transistors
organosilanes
scanning Kelvin-probe microscopy
self-assembly
threshold voltage
To reference this document use:
http://resolver.tudelft.nl/uuid:44bbeb42-826c-4db6-8274-075f57181970
TNO identifier
446459
ISSN
1613-6810
Source
Small, 8 (2), 241-245
Document type
article