Controlling P and B diffusion during polysilicon formation

Controlling P and B diffusion during polysilicon formation

Lamers, M.
Bronsveld, P.
Liu, J.
Weeber, A.

Brendel, R. (editor)
Poortmans, J. (editor)
Weeber, A. (editor)
Hahn, G. (editor)
Ballif, C. (editor)
Glunz, S. (editor)
Ribeyron, P.J. (editor)

2018

High quality passivating contacts can be realized by using the combination of a thin interfacial oxide (SiOx) and doped polysilicon (polySi). Recombination losses are minimized by providing very good passivation between the thin hydrogenated oxide and the cSi, a high field effect by the highly doped polySi [1-2], combined with the low level penetration of dopants in the wafer [2-3]. To realize this low level in-diffusion of dopants, several interacting options are evaluated in this work: the quality of the thin oxide layer (growth method), combined with a diffusion blocking method (nitridation), doping concentration levels in the polySi and temperature of diffusion. It is shown that for Phosphorus (P)-doped polySi, in-diffusion can be reduced by adding an i-layer in between the oxide and the highly doped polySi, lowering the overall doping level in the system slightly. For Boron (B)-doped polySi, in-diffusion can be blocked by nitridation of the SiO2 layer

Energy Efficiency
Energy
Energy / Geological Survey Netherlands

http://resolver.tudelft.nl/uuid:43599933-1ab7-487b-9abb-45ab55f58f48

https://doi.org/10.1063/1.5049274

842206

American Institute of Physics Inc.

9780735417151

0094-243X

SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics. 19 March 2018 through 21 March 2018, 1999, 1-6

040011

conference paper