Title
Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors
Author
Simicic, M.
Ashif, N.R.
Hellings, G.
Chen, S.H.
Nag, M.
Kronemeijer, A.J.
Myny, K.
Linten, D.
Publication year
2020
Abstract
The thin-film-transistor (TFT) technology has attracted significant attention in account of the possibility to manufacture transistors on large and flexible substrates, at low processing temperatures and at a low cost. Next to the well-established amorphous silicon TFT technology used mostly for displays, the amorphous Indium-Gallium-Zinc-Oxide (IGZO) and Indium-Tin-Zinc-Oxide (ITZO) materials offer a higher current conductivity and thus a better performance. This makes them interesting candidates for TFT integrated circuits also beyond displays. However, integrated circuits can be easily damaged by electrostatic discharges (ESD) and require integrated protection solutions. To find possible vulnerabilities and solutions, this paper analyzes ESD robustness of two IGZO and one ITZO TFT device architecture.
Subject
Electrostatic discharge
ESD
IGZO
Indium-gallium-zinc-oxide
Indium-tin-zinc-oxide
ITZO
TFT
Thin film transistors
To reference this document use:
http://resolver.tudelft.nl/uuid:424a8c1d-a75b-4ed5-81a4-d8db8805667d
DOI
https://doi.org/10.1016/j.microrel.2020.113632
TNO identifier
955300
Publisher
Elsevier Ltd
ISSN
0026-2714
Source
Microelectronics Reliability, 108 (108)
Document type
article