Miracle: Material Independent Rear Passivating Contact Solar cells using optimized texture and novel p+poly-Si hydrogenation

Miracle: Material Independent Rear Passivating Contact Solar cells using optimized texture and novel p+poly-Si hydrogenation

Tool, C.J.J.
Stodolny, M.K.
Anker, J.
Janssen, G.J.M.
Lenes, M.
Romijn, I.

2018

A record low surface recombination current for boron doped p+poly-Si passivation on random pyramid textured Cz wafers(Jo,s of 10 fA/cm2) has been achieved, with an outlook to even lower Jo,s values. Solar cells have been completed using a lowcost process flow based on screen-printed and firing-through metallization and with a process flow that is applicable to both n-type and p-type c-Si wafers. The cells have a uniform p+poly-Si backside passivation including passivating contacts and a local n+poly-Si passivating contact on the front. A first batch of 6 inch cells prepared with these passivating contacts and low-cost processing yielded efficiencies up to 20.1%.

Tunneling contacts
Charge carrier lifetime
Photovoltaic cells
Silicon

http://resolver.tudelft.nl/uuid:3f01c74c-f0f2-4568-bbff-fe2c32f76671

861674

Institute of Electrical and Electronics Engineers IEEE

9781538685297

IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, 10-15 June 2018, 3900-3904

8547969

conference paper