Title
Large area liquid crystal monodomain field-effect transistors
Author
TNO Industrie en Techniek
van Breemen, A.J.J.M.
Herwig, P.T.
Chlon, C.H.T.
Sweelssen, J.
Schoo, H.F.M.
Setayesh, S.
Hardeman, W.M.
Martin, C.A.
de Leeuw, D.M.
Valeton, J.J.P.
Bastiaansen, C.W.M.
Broer, D.J.
Popa-Merticaru, A.R.
Meskers, S.C.J.
Publication year
2006
Abstract
Butyl, hexyl, and decyl derivatives of the liquid-crystalline organic semiconductor 5,5″-bis(5-alkyl-2-thienylethynyl)-2,2′:5′, 2″-terthiophene were synthesized and studied with respect to their structural, optical, and electrical properties. By means of an optimized thermal annealing scheme the hexyl and decyl compounds could be processed into self-assembled monodomain films of up to 150 mm in diameter. These were investigated with X-ray diffractometry, which revealed a clearly single-crystalline monoclinic morphology with lamellae parallel to the substrate. Within the lamellae the molecules were found to arrange with a tilt of about 50° with the rubbing direction of the polyimide alignment layer. The resulting, close side-to-side packing was confirmed by measurements of the UV/vis absorption, which showed a dichroic ratio of 19 and indicated H-aggregation. AFM analyses revealed self-affinity in the surface roughness of the monodomain. The compounds showed bipolar charge transport in TOF measurements, with hole mobilities reaching up to 0.02 cm2/Vs and maximum electron mobilities around 0.002 cm2/Vs. The hexyl derivative was processed into large-area monodomain top-gate field-effect transistors, which were stable for months and showed anisotropic hole mobilities of up to 0.02 cm2/Vs. Compared to multidomain bottom-gate transistors the monodomain formation allowed for a mobility increase by 1 order of magnitude.
Subject
Annealing
Crystalline materials
Liquid crystal displays
Semiconducting organic compounds
Synthesis (chemical)
X ray diffraction
Anisotropic hole mobilities
Self-affinity
Single-crystalline monoclinic morphology
UV/vis absorption
Field effect transistors
Polyimide
Thiophene derivative
Atomic force microscopy
Light absorption
Liquid crystal
Semiconductor
surface property
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http://resolver.tudelft.nl/uuid:3df4408d-15e7-46f7-b1a8-c401cd52de40
DOI
https://doi.org/10.1021/ja055337l
TNO identifier
239133
Publisher
American Chemical Society
ISSN
0002-7863
Source
Journal of the American Chemical Society, 128 (128), 2336-2345
Document type
article