Hydrogenation of striation rings in n-type silicon wafers

Hydrogenation of striation rings in n-type silicon wafers

Manshanden, P.
Coletti, G.
Bronsveld, P.C.P.
Energieonderzoek Centrum Nederland

2015

N-type silicon has become more popular as base material for solar cells and receives an increasing amount of attention as a result. One of the defects occurring in n-type silicon are ring shaped patterns in lifetime maps (aka striation rings), which cause a steep decrease in conversion efficiency. Striation rings are linked to oxygen and can decrease recombination activity by anneals, illuminations and hydrogen in-diffusions, all which are usable on cell level. A decrease in recombination activity can be affected at temperatures up to 375 °C, whereas this decrease can be reversed by anneals above 500 °C. A side effect of these treatments is a change in resistivity even at temperatures below thermal donor formation. Investigations to the field stability of these treatments show no increase in recombination activity so far.

http://resolver.tudelft.nl/uuid:3ce333d0-f8d0-49a2-8fb8-03513c7b6e63

822090

ECN-M--15-008

ECN, Petten

conference paper