Print Email Facebook Twitter Two-temperature model for pulsed-laser-induced subsurface modifications in Si Title Two-temperature model for pulsed-laser-induced subsurface modifications in Si Author Verburg, P.C. Römer, G.R.B.E. Huis In 'T Veld, A.J. Publication year 2014 Abstract We investigated the laser-material interaction during the production of laser-induced subsurface modifications in silicon with a numerical model. Such modifications are of interest for subsurface wafer dicing. To predict the shape of these modifications, a two-temperature model and an optical model were combined. We compared the model results with experimental data obtained by focusing laser pulses in the bulk of silicon wafers using a microscope objective. This comparison revealed a good agreement between the simulations and the experimental results. A parameter study was performed to investigate the effect of the laser wavelength, pulse duration and pulse energy on the formation of subsurface modifications. We found that both single- and multi-photon absorption may be used to produce subsurface modifications in silicon. © 2013 Springer-Verlag Berlin Heidelberg. Subject Mechanics, Materials and StructuresEAM - Equipment for Additive ManufacturingTS - Technical SciencesPhysicsIndustrial InnovationLaser wavelengthLaser-material interactionsMicroscope objectiveMulti photon absorptionOptical modelingParameter studiesPulse durationsTwo Temperature ModelMulti photon processesPulsed lasersSilicon wafers To reference this document use: http://resolver.tudelft.nl/uuid:3b1b840b-f047-468a-93e5-52a7e078797f DOI https://doi.org/10.1007/s00339-013-7668-5 TNO identifier 500218 ISSN 0947-8396 Source Applied Physics A: Materials Science and Processing, 114 (4), 1135-1143 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.