Print Email Facebook Twitter A 6b 10MS/s current-steering DAC manufactured with amorphous Gallium-Indium-Zinc-Oxide TFTs achieving SFDR > 30dB up to 300kHz Title A 6b 10MS/s current-steering DAC manufactured with amorphous Gallium-Indium-Zinc-Oxide TFTs achieving SFDR > 30dB up to 300kHz Author Raiteri, D. Torricelli, F. Myny, K. Nag, M. van der Putten, B. Smits, E. Steudel, S. Tempelaars, K. Tripathi, A.K. Gelinck, G.H. van Roermund, A. Cantatore, E. Publication year 2012 Abstract Amorphous Gallium-Indium-Zinc-Oxide (GIZO or IGZO) has been recently proposed  as an interesting semiconductor for manufacturing TFTs because of its mobility (μ∼20cm 2/Vs), superior to other common materials for large-area electronics like organic semiconductors and a-Si (μ∼1cm 2/Vs). The amorphous nature of GIZO grants also a good uniformity, contrary to Low Temperature Polycrystalline Silicon (LTPS), which still offers the best mobility among large-area TFT technologies (μ∼100cm 2/Vs). The optical transparency and the relatively low fabrication temperature (<150°C) make this technology especially suitable for display backplanes and relative driving electronics , as well as for any kind of large-area applications on plastic foils, e.g. biomedical sensors, non-volatile memories , RFIDs , etc. © 2012 IEEE. Subject Mechatronics, Mechanics & MaterialsHOL - HolstTS - Technical SciencesElectronicsIndustrial Innovation To reference this document use: http://resolver.tudelft.nl/uuid:35642f23-dddb-4444-8594-dc140fe8c54a TNO identifier 460453 ISBN 9781467303736 ISSN 0193-6530 Source 59th International Solid-State Circuits Conference, ISSCC 2012, 19 February 2012 through 23 February 2012, San Francisco, CA, USA, 55, 314-315 Series Digest of Technical Papers - IEEE International Solid-State Circuits Conference Article number No.: 6177028 Document type conference paper Files To receive the publication files, please send an e-mail request to TNO Library.