Title
A 6b 10MS/s current-steering DAC manufactured with amorphous Gallium-Indium-Zinc-Oxide TFTs achieving SFDR > 30dB up to 300kHz
Author
Raiteri, D.
Torricelli, F.
Myny, K.
Nag, M.
van der Putten, B.
Smits, E.
Steudel, S.
Tempelaars, K.
Tripathi, A.K.
Gelinck, G.H.
van Roermund, A.
Cantatore, E.
Publication year
2012
Abstract
Amorphous Gallium-Indium-Zinc-Oxide (GIZO or IGZO) has been recently proposed [1] as an interesting semiconductor for manufacturing TFTs because of its mobility (μ∼20cm 2/Vs), superior to other common materials for large-area electronics like organic semiconductors and a-Si (μ∼1cm 2/Vs). The amorphous nature of GIZO grants also a good uniformity, contrary to Low Temperature Polycrystalline Silicon (LTPS), which still offers the best mobility among large-area TFT technologies (μ∼100cm 2/Vs). The optical transparency and the relatively low fabrication temperature (<150°C) make this technology especially suitable for display backplanes and relative driving electronics [2], as well as for any kind of large-area applications on plastic foils, e.g. biomedical sensors, non-volatile memories [3], RFIDs [4], etc. © 2012 IEEE.
Subject
Mechatronics, Mechanics & Materials
HOL - Holst
TS - Technical Sciences
Electronics
Industrial Innovation
To reference this document use:
http://resolver.tudelft.nl/uuid:35642f23-dddb-4444-8594-dc140fe8c54a
TNO identifier
460453
ISBN
9781467303736
ISSN
0193-6530
Source
59th International Solid-State Circuits Conference, ISSCC 2012, 19 February 2012 through 23 February 2012, San Francisco, CA, USA, 55, 314-315
Series
Digest of Technical Papers - IEEE International Solid-State Circuits Conference
Article number
No.: 6177028
Document type
conference paper