Print Email Facebook Twitter Origin of multiple memory states in organic ferroelectric field-effect transistors Title Origin of multiple memory states in organic ferroelectric field-effect transistors Author Kam, B. Li, X. Cristoferi, C. Smits, E.C.P. Mityashin, A. Schols, S. Genoe, J. Gelinck, G.H. Heremans, P. Publication year 2012 Abstract In this work, we investigate the ferroelectric polarization state in metal-ferroelectric-semiconductor-metal structures and in ferroelectric field-effect transistors (FeFET). Poly(vinylidene fluoride-trifluoroethylene) and pentacene was used as the ferroelectric and semiconductor, respectively. This material combination in a bottom gate-top contact transistor architecture exhibits three reprogrammable memory states by applying appropriate gate voltages. Scanning Kelvin probe microscopy in conjunction with standard electrical characterization techniques reveals the state of the ferroelectric polarization in the three memory states as well as the device operation of the FeFET. © 2012 American Institute of Physics. Subject Mechatronics, Mechanics & MaterialsHOL - HolstTS - Technical SciencesHigh Tech Systems & MaterialsElectronicsIndustrial InnovationContact transistorsDevice operationsElectrical characterizationFerroelectric field effect transistorsFerroelectric polarizationGate voltagesMaterial combinationMemory statePentacenesPoly(vinylidene fluoride-trifluoroethylene)ReprogrammableScanning Kelvin probe microscopyOrganic field effect transistorsPolarizationFerroelectricity To reference this document use: http://resolver.tudelft.nl/uuid:2f9b65c7-363e-4580-ad30-577f35820ca1 TNO identifier 462882 ISSN 0003-6951 Source Applied Physics Letters, 101 (3) Article number No.: 033304 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.