Title
Origin of multiple memory states in organic ferroelectric field-effect transistors
Author
Kam, B.
Li, X.
Cristoferi, C.
Smits, E.C.P.
Mityashin, A.
Schols, S.
Genoe, J.
Gelinck, G.H.
Heremans, P.
Publication year
2012
Abstract
In this work, we investigate the ferroelectric polarization state in metal-ferroelectric-semiconductor-metal structures and in ferroelectric field-effect transistors (FeFET). Poly(vinylidene fluoride-trifluoroethylene) and pentacene was used as the ferroelectric and semiconductor, respectively. This material combination in a bottom gate-top contact transistor architecture exhibits three reprogrammable memory states by applying appropriate gate voltages. Scanning Kelvin probe microscopy in conjunction with standard electrical characterization techniques reveals the state of the ferroelectric polarization in the three memory states as well as the device operation of the FeFET. © 2012 American Institute of Physics.
Subject
Mechatronics, Mechanics & Materials
HOL - Holst
TS - Technical Sciences
High Tech Systems & Materials
Electronics
Industrial Innovation
Contact transistors
Device operations
Electrical characterization
Ferroelectric field effect transistors
Ferroelectric polarization
Gate voltages
Material combination
Memory state
Pentacenes
Poly(vinylidene fluoride-trifluoroethylene)
Reprogrammable
Scanning Kelvin probe microscopy
Organic field effect transistors
Polarization
Ferroelectricity
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TNO identifier
462882
ISSN
0003-6951
Source
Applied Physics Letters, 101 (3)
Article number
No.: 033304
Document type
article