Print Email Facebook Twitter Dielectric interface-dependent spatial charge distribution in ambipolar polymer semiconductors embedded in dual-gate field-effect transistors Title Dielectric interface-dependent spatial charge distribution in ambipolar polymer semiconductors embedded in dual-gate field-effect transistors Author Lee, J. Roelofs, W.S.C. Janssen, R.A.J. Gelinck, G.H. Publication year 2016 Abstract The spatial charge distribution in diketopyrrolopyrrole-containing ambipolar polymeric semiconductors embedded in dual-gate field-effect transistors (DGFETs) was investigated. The DGFETs have identical active channel layers but two different channel/gate interfaces, with a CYTOP™ organic dielectric layer for the top-gate and an octadecyltrichlorosilane (ODTS) self-assembled monolayer-treated inorganic SiO2 dielectric for the bottom-gate, respectively. Temperature-dependent transfer measurements of the DGFETs were conducted to examine the charge transport at each interface. By fitting the temperature-dependent measurement results to the modified Vissenberg-Matters model, it can be inferred that the top-channel interfacing with the fluorinated organic dielectric layers has confined charge transport to two-dimensions, whereas the bottom-channel interfacing with the ODTS-treated SiO2 dielectric layers has three-dimensional charge transport. Subject Nano TechnologyHOL - HolstTS - Technical SciencesIndustrial InnovationCharge distributionOrganic polymersOctadecyltrichlorosilaneODTSOrganic dielectric layersPolymer semiconductorsSpatial charge distributionField effect transistors To reference this document use: http://resolver.tudelft.nl/uuid:2cd674bb-832f-419d-8ce3-12cbf3d15cec DOI https://doi.org/10.1063/1.4960096 TNO identifier 546227 Publisher American Institute of Physics Inc. ISSN 0003-6951 Source Applied Physics Letters, 109 (4) Article number 043301 Document type article Files PDF lee-2016-dielectric.pdf