Title
Ultralow dark current in near-infrared perovskite photodiodes by reducing charge injection and interfacial charge generation
Author
Ollearo, R.
Wang, J.
Dyson, M.J.
Weijtens, C.H.L.
Fattori, M.
van Gorkom, B.T.
van Breemen, A.J.J.M.
Meskers, C.J.
Janssen, R.A.J.
Gelinck, G.H.
Publication year
2021
Abstract
Metal halide perovskite photodiodes (PPDs) offer high responsivity and broad spectral sensitivity, making them attractive for low-cost visible and near-infrared sensing. A significant challenge in achieving high detectivity in PPDs is lowering the dark current density (JD) and noise current (in). This is commonly accomplished using charge-blocking layers to reduce charge injection. By analyzing the temperature dependence of JD for lead-tin based PPDs with different bandgaps and electron-blocking layers (EBL), we demonstrate that while EBLs eliminate electron injection, they facilitate undesired thermal charge generation at the EBLperovskite interface. The interfacial energy offset between the EBL and the perovskite determines the magnitude and activation energy of JD. By increasing this offset we realized a PPD with ultralow JD and in of 5 × 10−8 mA cm−2 and 2 × 10−14 A Hz−1/2, respectively, and wavelength sensitivity up to 1050 nm, establishing a new design principle to maximize detectivity in perovskite photodiodes.
Subject
Industrial Innovation
To reference this document use:
http://resolver.tudelft.nl/uuid:2c6fd9e4-55f2-4178-9583-663c2bdbeff1
DOI
https://doi.org/10.1038/s41467-021-27565-1
TNO identifier
962280
Publisher
Nature Research
ISSN
2041-1723
Source
Nature Communications
Document type
article