Title
Conduction mechanism in amorphous InGaZnO thin film transistors
Author
Bhoolokam, A.
Nag, M.
Steudel, S.
Genoe, J.
Gelinck, G.
Kadashchuk, A.
Groeseneken, G.
Heremans, P.
Publication year
2016
Abstract
We validate a model which is a combination of multiple trapping and release and percolation model for describing the conduction mechanism in amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT). We show that using just multiple trapping and release or percolation model is insufficient to explain TFT behavior as a function of temperature. We also show the intrinsic mobility is dependent on temperature due to scattering by ionic impurities or lattice. In solving the Poisson equation to find the surface potential and back potential as a function of gate voltage, we explicitly allow for the back surface to be floating, as is the case for a-IGZO transistors. The parameters for gap states, percolation barriers and intrinsic mobility at room temperature that we extract with this comprehensive model are in good agreement with those extracted in literature with partially-complete models. cop. 2016 The Japan Society of Applied Physics.
Subject
Nano Technology
HOL - Holst
TS - Technical Sciences
Materials
Industrial Innovation
Poisson equation
Semiconducting indium compounds
Amorphous indiumgallium-zinc oxide
a-IGZO
TFT
Amorphous InGaZnO
Ionic impurity
Multiple trapping
Percolation models
Thin film transistors
To reference this document use:
http://resolver.tudelft.nl/uuid:2a8a32e3-6905-4e87-86c6-5691549ae428
DOI
https://doi.org/10.7567/jjap.55.014301
TNO identifier
531074
Publisher
Japan Society of Applied Physics
ISSN
0021-4922
Source
Japanese Journal of Applied Physics, 55 (1)
Article number
014301
Document type
article