Title
GaN C-band HPA for phased-array applications
Author
van Wanum, M.
de Hek, A.P.
van Vliet, F.E.
Publication year
2013
Abstract
In the UMS GH25-10 GaN MMIC technology a Cband high power amplifier (HPA) has been realized. The current design is primarily intended for use in a space-based SAR system with a center frequency of 5.4 GHz and a sweep bandwidth of 100 MHz. To enable reuse of the amplifier in other radar systems such as weather radar, a large bandwidth is required. A design bandwidth from 5 to 6 GHz has been used. Simulation and measurement data from on-wafer and mounted samples will be shown. Showing more than 50 W output power with 45% efficiency the HPA shows sufficient performance to be used in a module for state-of-the-art active electronically scanned arrays. The measured output power and efficiency are a record for MMIC amplifiers. © 2013 IEEE.
Subject
Physics & Electronics
RT - Radar Technology
TS - Technical Sciences
Defence Research
Radar
Defence, Safety and Security
Gallium nitride
Logic gates
MMICs
Power generation
Radar
Threshold voltage
High power amplifier
Phased array application
Space based SAR system
To reference this document use:
http://resolver.tudelft.nl/uuid:290b9d79-4a96-4013-a718-9501222b0054
DOI
https://doi.org/10.1109/csics.2013.6659229
TNO identifier
488287
Publisher
IEEE, Piscataway, NJ
Source
35th IEEE Compound Semiconductor Integrated Circuit Symposium: Integrated Circuits in GaAs, InP, SiGe, GaN and Other Compound Semiconductors, CSICS 2013, 13-16 October 2013, Monterey, CA, USA
Document type
conference paper