Title
Industrial high-rate (~14 nm/s) deposition of low resistive and transparent ZnOx:Al films on glass
Author
Illiberi, A.
Kniknie, B.
van Deelen, J.
Steijvers, H.L.A.H.
Habets, D.
Simons, P.J.P.M.
Janssen, A.C.
Beckers, E.H.A.
Publication year
2011
Abstract
Aluminum doped ZnOx (ZnOx:Al) films have been deposited on glass in an in-line industrial-type reactor by a metalorganic chemical vapor deposition process at atmospheric pressure. Tertiary-butanol has been used as oxidant for diethylzinc and trimethylaluminium as dopant gas. ZnOx:Al films can be grown at very high deposition rates of ~14 nm/s for a substrate speed from 150 to 500 mm/min. The electrical, structural (crystallinity and morphology) and optical properties of the deposited films have been characterized by using Hall, four point probe, X-ray diffraction, atomic force microscope and spectrophotometer, respectively. All the films have c-axis, (002) preferential orientation and good crystalline quality. ZnO x:Al films are highly conductive (R<9 O/sq, for a film thickness above 1300 nm) and transparent in the visible range (>80%). These results show that ZnOx:Al films with good electrical and optical properties can be grown with a high throughput industrial CVD process at atmospheric pressure. First pin a-Si:H solar cells have been deposited on this material, with initial efficiency approaching 8%. © 2011 Elsevier B.V. All rights reserved.
Subject
Mechatronics, Mechanics & Materials ; Fluid Mechanics Chemistry & Energetics
TFT - Thin Film Technology ; PMC - Process Modelling & Control ; EAM - Equipment for Additive Manufacturing
TS - Technical Sciences
Electronics
Aluminum doped zinc oxide
Atmospheric pressure chemical-vapor-deposition
Deposition rate
Thin film solar cells
Transparent conductive oxide
a-Si:H
Al films
Aluminum-doped zinc oxide
Aluminum-doped ZnO
Atomic force microscopes
Crystalline quality
Crystallinities
CVD process
Deposited films
Diethylzinc
Electrical and optical properties
Four point probe
High deposition rates
High rate
High throughput
In-line
Initial efficiency
Metalorganic chemical vapor deposition
Preferential orientation
Thin film solar cells
Transparent conductive oxides
Trimethylaluminium
Visible range
ZnO
Aluminum
Atmospheric chemistry
Atmospheric pressure
Atmospherics
Atomic force microscopy
Conductive films
Crystal atomic structure
Deposition
Deposition rates
Doping (additives)
Electric properties
Glass
Industry
Metallic films
Metallorganic chemical vapor deposition
Nanostructured materials
Optical properties
Solar cells
Thin films
Vapor deposition
Vapors
X ray diffraction
Zinc
Zinc oxide
Aluminum coatings
To reference this document use:
http://resolver.tudelft.nl/uuid:28e80c3e-c346-4bce-80e2-c0e5df27031f
TNO identifier
429694
ISSN
0927-0248
Source
Solar Energy Materials and Solar Cells, 95 (7), 1955-1959
Document type
article