Print Email Facebook Twitter Programmable a-InGaZnO Gate Array with Laser-Induced Forward Transfer Title Programmable a-InGaZnO Gate Array with Laser-Induced Forward Transfer Author Jo, Y. Kwon, J. van der Steen, J.L.J. A. Kronemeijer, A. Jung, S. Publication year 2021 Abstract Here, we present a pseudo-CMOS NOR gate array based on dual-gate amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) on plastic. We fabricated a 14 × 12 array of NOR gates which was programmed using laser-induced forward transfer printing technology to realize a negative-edge-triggered D flip-flop. Two drive transistors in a conventional NOR gate configuration were replaced by a single independently gate-controlled dual-gate transistor, which enabled us to design and fabricate a gate array with much reduced number of transistors and interconnects. We anticipate that programmable gate arrays based on dual-gate oxide TFTs can be a new route to design and fabrication of digital circuitry that will be essential for emerging applications Internet-of-Things and wearable electronics. Subject Gate arrayThin-film circuit fabricationMetal oxide semiconductorPrinted electronicsFlexibleIndustrial Innovation To reference this document use: http://resolver.tudelft.nl/uuid:2682b066-fa5a-40b2-8d29-bee255f519cd DOI https://doi.org/10.1088/2058-8585/abe653 TNO identifier 955522 Publisher IOP Publishing ISSN 2058-8585 Source Flexible and Printed Electronics, 6 (6) Document type article Files To receive the publication files, please send an e-mail request to TNO Library.