Print Email Facebook Twitter Large‐area spatial atomic layer deposition of amorphous oxide semiconductors at atmospheric pressure Title Large‐area spatial atomic layer deposition of amorphous oxide semiconductors at atmospheric pressure Author Katsouras, I. Frijters, C. Poodt, P. Gelinck, G. Kronemeijer, A.J. Publication year 2019 Abstract Indium gallium zinc oxide (IGZO) is deposited using plasma‐enhanced spatial atomic layer deposition (sALD) on substrates as large as 32 × 35 cm2. Excellent uniformity and thickness control leads to high‐performing and stable coplanar top‐gate self‐aligned (SA) thin‐film transistors (TFTs). The integration of a sALD‐deposited aluminum oxide buffer layer into the TFT stack further improves uniformity and stability. The results demonstrate the viability of atmospheric sALD as a novel deposition technique for the flat‐panel display industry. Subject Nano TechnologyHOL - HolstTS - Technical SciencesIndustrial InnovationSpatial atomic layer depositionIGZOSelf-aligned TFTSemiconductorsTFT manufacturing To reference this document use: http://resolver.tudelft.nl/uuid:265e4cc0-8e55-4daa-8611-87e6d46f26d4 DOI https://doi.org/10.1002/jsid.783 TNO identifier 868178 Publisher Wiley ; Society for Information Display ISSN 1938-3657 Source Journal of the Society for Information Display, 27 (5), 304-312 Article number jsid.783 Document type article Files To receive the publication files, please send an e-mail request to TNO Library.