Title
Data retention in organic ferroelectric resistive switches
Author
Khikhlovskyi, V.
van Breemen, A.J.J.M.
Janssen, R.A.J.
Gelinck, G.H.
Kemerink, M.
Publication year
2016
Abstract
Solution-processed organic ferroelectric resistive switches could become the long-missing non-volatile memory elements in organic electronic devices. To this end, data retention in these devices should be characterized, understood and controlled. First, it is shown that the measurement protocol can strongly affect the 'apparent' retention time and a suitable protocol is identified. Second, it is shown by experimental and theoretical methods that partial depolarization of the ferroelectric is the major mechanism responsible for imperfect data retention. This depolarization occurs in close vicinity to the semiconductor-ferroelectric interface, is driven by energy minimization and is inherently present in this type of phase-separated polymer blends. Third, a direct relation between data retention and the charge injection barrier height of the resistive switch is demonstrated experimentally and numerically. Tuning the injection barrier height allows to improve retention by many orders of magnitude in time, albeit at the cost of a reduced on/off ratio. cop. 2016 Elsevier B.V. All rights reserved.
Subject
Nano Technology
HOL - Holst
TS - Technical Sciences
Electronics
Industrial Innovation
Data retention
Ferroelectrics
Memories
Organic electronics
Resistive switching
To reference this document use:
http://resolver.tudelft.nl/uuid:1da0a664-1b56-439d-bb3b-4a2af3f63695
DOI
https://doi.org/10.1016/j.orgel.2016.01.016
TNO identifier
531919
Publisher
Elsevier
ISSN
1566-1199
Source
Organic Electronics: physics, materials, applications, 31, 56-62
Document type
article