Print Email Facebook Twitter Flexible 16nJ/c.s. 134S/s 6b MIM C-2C ADC using Dual Gate Self-aligned Unipolar Metal-Oxide TFTs Title Flexible 16nJ/c.s. 134S/s 6b MIM C-2C ADC using Dual Gate Self-aligned Unipolar Metal-Oxide TFTs Author Papadopoulos, N. Steudel, S. Kronemeijer, A.J. Ameys, M. Myny, K. Publication year 2019 Subject Industrial InnovationGallium compoundsII-VI semiconductorsMetal insulator boundariesMetalsMIM devicesSemiconducting indium compoundsThin film transistorsAnalog to digital convertersFigure of merit (FOM)Flexible substrateIndium gallium zinc oxidesMetal insulator metalsPolymeric substrateSampling ratesSuccessive approximationsAnalog to digital conversion To reference this document use: http://resolver.tudelft.nl/uuid:1c4ebd9e-35e6-4cea-ac20-bf18b7d15cfd DOI https://doi.org/10.1109/cicc.2019.8780122 TNO identifier 868619 Publisher Institute of Electrical and Electronics Engineers Inc. ISBN 9781538693957 ISSN 0886-5930 Source Proceedings of the Custom Integrated Circuits Conference, 40th Annual IEEE Custom Integrated Circuits Conference, CICC 2019, 14 April 2019 through 17 April 2019 Article number 8780122 Document type conference paper Files To receive the publication files, please send an e-mail request to TNO Library.