Print Email Facebook Twitter Effects of passivation configuration and emitter surface doping concentration on polarization-type potential-induced degradation in n-type crystalline-silicon photovoltaic modules Title Effects of passivation configuration and emitter surface doping concentration on polarization-type potential-induced degradation in n-type crystalline-silicon photovoltaic modules Author Yamaguchi, S. van Aken, B.B. Stodolny, M.K. Loffler, J. Masuda, A. Ohdaira, K. Publication year 2021 Abstract System voltages can cause significant degradation in photovoltaic modules. Polarization-type potential-induced degradation (PID) is accompanied by decreases in the short-circuit current density and the open-circuit voltage. The system voltage causes a polarization and surface charge accumulation, increasing the interface recombination. The surface passivation and the emitter doping concentration and gradient are considered to have large impacts. However, a systematic study on these effects has not yet been performed. In this paper, the effects of the front surface structure of n-type passivated emitter and rear totally diffused cell modules were investigated by accelerated PID tests. Standard cells with thin silicon dioxide/80-nm silicon nitride (SiNx) antireflection/passivation layers, refractive index (RI) of 2.0, exhibited typical polarization-type PID. Cells with increased RI = 2.4 for the bottom 20-nm SiNx showed no degradation at all. This may be caused by reduced charge accumulation in the SiNx layer near the interface due to the higher electrical conductivity of the Si-rich bottom layer. Secondly, cells with both a highly distorted interface, due to nitrogen insertion in the silicon surface, and an emitter with a high surface doping concentration have excellent resistance to PID. Cells with either the highly distorted interface or the higher emitter-surface doping concentration show no to minor improved resistance to PID. These findings improve the understanding of the effects of the front surface structure of cells on the polarization-type PID and may contribute to the implementation of these measures to reduce PID. Subject Open circuit voltagePassivationPhotovoltaic cellsRefractive indexSilicaSilicon nitrideSilicon oxidesSilicon solar cellsSurface structurePolarization-type potential-induced degradationPhotovoltaic moduleN-type crystalline-silicon solar cellPassivated emitter and rear totally diffused cellReliabilityAcceleration test To reference this document use: http://resolver.tudelft.nl/uuid:1955b800-77d2-435d-9da2-ada226f625e7 DOI https://doi.org/10.1016/j.solmat.2021.111074 TNO identifier 957529 Publisher Elsevier ISSN 0927-0248 Source Solar Energy Materials and Solar Cells, 226 (226) Document type article Files To receive the publication files, please send an e-mail request to TNO Library.