Title
Electrical control of uniformity in quantum dot devices
Author
Meyer, M.
Déprez, C.
van Abswoude, T.R.
Meijer, I.N.
Liu, D.
Wang, C.A.
Karwal, S.
Oosterhout, S.D.
Borsoi, F.
Sammak, A.
Hendrickx, N.W.
Scappucci, G.
Veldhorst, M.
Publication year
2023
Abstract
Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the intrinsic potential landscape using hysteretic shifts of the gate voltage characteristics. We demonstrate the tuning of pinch-off voltages in quantum dot devices over hundreds of millivolts that then remain stable at least for hours. Applying our method, we homogenize the pinch-off voltages of the plunger gates in a linear array for four quantum dots, reducing the spread in pinch-off voltages by one order of magnitude. This work provides a new tool for the tuning of quantum dot devices and offers new perspectives for the implementation of scalable spin qubit arrays.
Subject
Quantum dot
Hysteresis
Uniformity
Spin qubit
To reference this document use:
http://resolver.tudelft.nl/uuid:18302005-6578-489a-a5f3-c056cb7ed5c3
TNO identifier
985475
Publisher
ACS
Source
NANO letters, 23 (23)
Document type
article