Title
Sîngle-source dual-iayer amorphous IGZO thîn-fîlm transistors for display and circuit applications
Author
Nag, M.
Chasin, A.
Roekele, M.
Steudel, S.
Myny, K.
Bhoolokam, A.
Tripathi, A.
van der Putten, B.
Kumar, A.
van der Steen, J.L.
Genoe, J.
Li, F.
Maas, J.
van Veenendaal, E.
Gelinck, G.
Heremans, P.
Publication year
2013
Abstract
In this study, the authors report on high-quality amorphous indium-galliunv-zinc oxide thinfilm transistors (TFTs) based on a single-source dual-layer concept processed at temperatures down to ISCC. The dual-layer concept allows the precise control of local charge carrier densities by varying the 02/Ar gas ratio during sputtering for the bottom and top layers. Therefore, extensive annealing steps after the deposition can be avoided. In addition, the dual-layer concept is more robust against variation of the oxygen flow in the deposition chamber. The charge carrier density in the TFT channel is namely adjusted by varying the thickness of the two layers whereby the oxygen concentration during deposition is switched only between no oxygen for the bottom layer and very high concentration for the top layer. The dual-layer TFTs are more stable under bias conditions in comparison with single-layer TFTs processed at low temperatures. Finally, the applicability of this dual-layer concept in logic circuitry such as 19-stage ring oscillators and a TFT backplane on polyethylene naphthalate foil containing a quarter video graphics array active-matrix organic lightemitting diode display demonstrator is proven.
Subject
Mechatronics, Mechanics & Materials
HOL - Holst
TS - Technical Sciences
Electronics
Industrial Innovation
Metal oxide
a-IGZO
Polyimide
Thin film transistors
Display technologies
To reference this document use:
http://resolver.tudelft.nl/uuid:181fbf07-315f-4eb0-8ecf-85936b126c27
DOI
https://doi.org/10.1002/isid.155
TNO identifier
502782
ISSN
0734-1768
Source
Journal of the Society for Information Display, 21 (3), 129-136
Document type
article